unisonic technologies co., ltd 60n08 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-521.a 60 amps, 80 volts n-channel power mosfet ? description the utc 60n08 is an n-channel power mosfet adopting utc?s advanced planar stripe and dmos technology to provide designers with perfectly high switching spee d and minimum on-state resistance. it also can withstand high energy pulse in the avalanche and commutation modes. the utc 60n08 is applied in low voltage applications such as dc motor control, automotive, and high efficiency switching for dc/dc converters. ? features * 60a, 80v, r ds(on) =0.024 ? @ v gs =10v * high switching speed * 100% avalanche tested ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 60N08L-TA3-T 60n08g-ta3-t to-220 g d s tube 60n08l-tf1-t 60n08g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
60n08 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-521.a ? absolute maximum ratings (t c =25c, unless otherwise specified ) parameter symbol ratings unit drain to source voltage v dss 80 v gate to source voltage v gss 25 v continuous i d 60 a continuous drain current pulsed i dm 176 a single pulsed (note 2) e as 560 mj avalanche energy repetitive (note 1) e ar 8.5 mj peak diode recovery dv/dt (note 3) dv/dt 6.5 v/ns to-220 100 w power dissipation to-220f1 p d 70 w junction temperature t j +150 c storage temperature t stg -55 ~ +175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit to-220 62.5 c/w junction to ambient to-220f1 ja 62.5 c/w to-220 1.25 c/w junction to case to-220f1 jc 1.77 c/w
60n08 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-521.a ? electrical characteristics (t c =25c, unless otherwise specified ) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 80 v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.07 v/c v ds =80v, v gs =0v 1 a drain-source leakage current i dss v ds =64v, t c =150c 10 a forward v ds =0v ,v gs =+25v +100 na gate-source leakage current reverse i gss v ds =0v ,v gs =-25v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v drain-source on-state resistance r ds(on) v gs =10v, i d =30a 0.018 0.024 ? forward transconductance g fs v ds =30v, i d =30a (note 4) 31 s dynamic parameters input capacitance c iss 1450 1900 pf output capacitance c oss 520 680 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 120 155 pf switching parameters total gate charge q g 50 65 nc gate-source charge q gs 9.3 nc gate-drain charge q gd v ds =64v, v gs =10v, i d =60a (note 4,5) 25 nc turn-on delay time t d(on) 16.5 45 ns turn-on rise time t r 200 410 ns turn-off delay time t d(off) 70 150 ns turn-off fall time t f v dd =40v, i d =60a, r g =25 ? (note 4,5) 95 200 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 60 a maximum body-diode pulsed current i sm 176 a drain-source diode forward voltage v sd i s =60a, v gs =0v 1.5 v body diode reverse recovery time t rr 73 ns body diode reverse recovery charge q rr v gs =0v, i s =60a, di f /dt=100a/ s (note 4) 185 c notes : 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=0.4mh, i as =44a, v dd =25v, r g =25 ? , starting t j =25c 3. i sd 60a, di/dt 300a/ s, v dd bv dss , starting t j =25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature
60n08 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-521.a ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
15n65 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-521.a ? test circuits and waveforms(cont.) 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
15n65 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-521.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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